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| MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# TIP100 TIP101 TIP102 NPN Plastic Medium-Power Silicon Transistors * * * * * Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc Low Collector-Emitter Saturation Voltage Monolithic Construction with Built-in Base-Emitter Shunt Resistors TO-220 Compact package Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Parameter Collector-Emitter Voltage TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 Rating 60 80 100 60 80 100 5.0 8.0 15 1.0 80 0.64 -55 to +150 -55 to +150 Min Max V Maximum Ratings Symbol VCEO Unit TO-220 B F C S Q VCBO Collector-Base Voltage V V A A A W O W/ C O C O C Units VEBO IC ICP IB PD TJ, TSTG Symbol Emitter-Base Voltage Collector Current-continuous Collector Current-peak Base Current Collector Dissipation @TC=25OC O Derate above 25 C Junction Temperature Storage Temperature Parameter Collector-Emitter Sustaining Voltage (IC=30mAdc, IB=0) TIP100 TIP101 TIP101 Collector Cut-off Current (VCE=30Vdc, IB=0) TIP100 (VCE=40Vdc, IB=0) TIP101 TIP102 (VCE=50Vdc, IB=0) Collector Cut-off Current TIP100 (VCB=60Vdc, IE=0) (VCB=80Vdc, IE=0) TIP101 TIP102 (VCB=100Vdc, IE=0) Emitter Cut-off Current (VBE=5.0Vdc, IC=0) T A U 12 H K 3 Electrical Characteristics @ 25OC Unless Otherwise Specified OFF CHARACTERISTICS VCEO(SUS) 60 80 100 --------------------50 50 50 50 50 50 8.0 L Vdc V D J R G N PIN 1. PIN 2. PIN 3. BASE COLLECTOR EMITTER ICEO uAdc ICBO uAdc IEBO mAdc DIM A B C D F G H J K L N Q R S T U V ON CHARACTERISTICS(1) DC Current Gain 1000 20000 (IC=3.0Adc, VCE=4.0Vdc) ---200 --(IC=8.0Adc, VCE=4.0Vdc) VCE(sat) Collector-Emitter Saturation Voltage --2.0 (IC=3.0Adc, IB=6.0mAdc) --2.5 Vdc (IC=8.0Adc, IB=80mAdc) VBE(ON) Base-Emitter On Voltage (IC=8.0Adc,VCE=4.0Adc) --2.8 Vdc hfe Small-Signal Current Gain (IC=3.0Adc,VCE=4.0Vdc,f=1.0MHz) 4.0 ----Cob Output Capacitance --200 pF (VCB=10V, IE=0, f=0.1MHz) (1) Pulse Test: Pulse Width<300us, Duty Cycle<2% Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7. hFE(1) DIMENSIONS INCHES MM MIN MAX MIN MAX .560 .625 14.22 15.88 .380 .420 9.65 10.67 .140 .190 3.56 4.82 .020 .139 .190 --.012 .500 .045 .190 .100 .080 .045 .230 ----.045 .045 .161 .110 .250 .025 .580 .060 .210 .135 .115 .055 .270 .050 ----0.51 3.53 2.29 --0.30 12.70 1.14 4.83 2.54 2.04 1.14 5.84 ----1.15 1.14 4.09 2.79 6.35 0.64 14.73 1.52 5.33 3.43 2.92 1.39 6.86 1.27 ----- NOTE www.mccsemi.com Revision: 3 1 of 4 2008/01/01 TA TC 4.0 80 PD, POWER DISSIPATION (WATTS) 3.0 60 1.0 t, TIME ( s) TC 2.0 40 0.7 0.5 0.3 0.2 1.0 20 TA 0 0 0 20 40 60 80 100 T, TEMPERATURE (C) 120 140 160 0.1 0.07 0.05 0.1 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 IC, COLLECTOR CURRENT (mA) Revision: 3 III I I IIIIIIIIIIII IIIIIIIIII I Figure 1. Power Derating D = 0.5 0.2 0.1 0.05 0.02 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 1.0 100 s 2 of 4 TIP100,101,102 MCC Micro Commercial Components 5.0 3.0 2.0 ts tf TM tr td @ VBE(off) = 0 V 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 2. Switching Times P(pk) ZJC(t) = r(t) RJC RJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZJC(t) DUTY CYCLE, D = t1/t2 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k Figure 3. Thermal Response 5 ms 1 ms dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO TIP100 TIP101 TIP102 10 2.0 5.0 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 4. Active-Region Safe Operating Area www.mccsemi.com 2008/01/01 TIP100,101,102 10,000 h fe , SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 TC = 25C VCE = 4.0 Vdc IC = 3.0 Adc 300 MCC Micro Commercial Components TJ = 25C 200 C, CAPACITANCE (pF) Cob 100 Cib 70 50 TM 30 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 5. Small-Signal Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 20,000 VCE = 4.0 V 10,000 hFE , DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 0.1 TJ = 150C 25C 3.0 TJ = 25C 2.6 2.2 IC = 2.0 A 4.0 A 6.0 A - 55C 1.8 1.4 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 10 1.0 0.3 0.5 0.7 1.0 2.0 5.0 IB, BASE CURRENT (mA) 10 20 30 Figure 7. DC Current Gain Figure 8. Collector Saturation Region 3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) 2.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 1.5 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 9. "On" Voltages www.mccsemi.com Revision: 3 3 of 4 2008/01/01 MCC Micro Commercial Components TM Ordering Information Device (Part Number)-BP Packing Bulk;1Kpcs/Box ***IMPORTANT NOTICE*** Micro Commercial Components Corp . reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages. ***APPLICATIONS DISCLAIMER*** Products offer by Micro Commercial Components Corp . are not intended for use in Medical, Aerospace or Military Applications. www.mccsemi.com Revision: 3 4 of 4 2008/01/01 |
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